Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-264-3, TO-264AA
Weight	10.000011g
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2000
JESD-609 Code	e1
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Terminal Finish	Tin/Silver/Copper (Sn/Ag/Cu)
Additional Feature	ULTRA FAST
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	300W
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Base Part Number	IXG*60N60
Pin Count	3
JESD-30 Code	R-PSFM-T3
Qualification Status	Not Qualified
Number of Elements	1
Element Configuration	Single
Case Connection	COLLECTOR
Input Type	Standard
Power - Max	300W
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	600V
Max Collector Current	75A
Collector Emitter Breakdown Voltage	600V
Collector Emitter Saturation Voltage	1.7V
Turn On Time	50 ns
Test Condition	480V, 60A, 2.7 Ω, 15V
Vce(on) (Max) @ Vge, Ic	1.7V @ 15V, 60A
Turn Off Time-Nom (toff)	650 ns
IGBT Type	PT
Gate Charge	130nC
Current - Collector Pulsed (Icm)	200A
Td (on/off) @ 25°C	50ns/300ns
Switching Energy	8mJ (off)
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	5V
Fall Time-Max (tf)	570ns
RoHS Status	RoHS Compliant

IXGK60N60

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