IRGIB6B60KD116P

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Manufacturer part number:IRGIB6B60KD116P

Manufacturer:Infineon Technologies

Description:IRGIB6B60KD116P datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

Case Package:SOT-23

Datasheet:IRGIB6B60KD116P Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mounting Type	Through Hole
Package / Case	TO-220-3 Full Pack
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	2004
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Input Type	Standard
Power - Max	38W
Reverse Recovery Time	70ns
Voltage - Collector Emitter Breakdown (Max)	600V
Current - Collector (Ic) (Max)	11A
Test Condition	400V, 5A, 100 Ω, 15V
Vce(on) (Max) @ Vge, Ic	2.2V @ 15V, 5A
IGBT Type	NPT
Gate Charge	18.2nC
Current - Collector Pulsed (Icm)	22A
Td (on/off) @ 25°C	25ns/215ns
Switching Energy	110μJ (on), 135μJ (off)

IRGIB6B60KD116P Description

IRGIB6B60KD116P transistor is a MOS field-effect RF power transistor designed to be used in signal applications. The special low thermal resistance packaging makes IRGIB6B60KD116P MOSFET suitable for ISM applications in which reliability and durability are essential. Infineon Technologies IRGIB6B60KD116P has the common source configuration.

IRGIB6B60KD116P Features

Gold metalization

Excellent thermal stability

Common source configuration

Thermally enhanced packaging

IRGIB6B60KD116P Applications

ISM applications

DC large signal applications

Power factor correction