Description

The IRG4BC20K is an insulated gate bipolar transistor. An insulated-gate bipolar transistor (IGBT) is a three-terminal power semiconductor device principally used as an electronic switch that evolved to combine high efficiency and fast switching as it was developed.

Features

• Latest generation design provides tighter parameter distribution and higher efficiency than previous generations

• High short circuit rating optimized for motor control, tsc =10μs, @360V VCE (start), TJ = 125°C, VGE = 15V

• Combines low conduction losses with high switching speed

• Latest generation 4 IGBTs offer highest power density motor controls possible

• This part replaces the IRGBC20K and IRGBC20M devices

• As a Freewheeling Diode, we recommend our HEXFREDTM ultrafast, ultrasoft recovery diodes for minimum EMI / Noise and switching losses in the Diode and IGBT

Applications

• Consumer electronics

• Industrial technology

• The energy sector

• Aerospace electronic devices

• Transportation

• Electronic switch