FGB30N6S2 Description

FGB30N6S2 is a type of 600V, SMPS II Series N-Channel IGBT with an Anti-Parallel StealthTM diode developed by ON Semiconductor. It is characterized by the fast switching speed of the SMPS IGBTs, lower gate charge, lower plateau voltage, and high avalanche capability (UIS). Thus it is ideally suitable for high-voltage switched mode power supply applications. Moreover, the FGB30N6S2 IGBT is able to shorten delay times and reduce the power requirement of the gate drive. 

FGB30N6S2 Features

Fast switching speed of the SMPS IGBTs

Lower gate charge

Lower plateau voltage

High avalanche capability (UIS)

FGB30N6S2 Applications

Power Factor Correction (PFC) circuits

Full bridge topologies

Half bridge topologies

Push-Pull circuits

Uninterruptible power supplies

Zero voltage and zero current switching circuits