IRG4BC20UD-SPBF

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Manufacturer part number:IRG4BC20UD-SPBF

Manufacturer:Infineon Technologies

Description:IRG4BC20UD-SPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

Case Package:SOT-23

Datasheet:IRG4BC20UD-SPBF Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	14 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2001
JESD-609 Code	e3
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn) - with Nickel (Ni) barrier
Subcategory	Insulated Gate BIP Transistors
Voltage - Rated DC	600V
Max Power Dissipation	60W
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
Current Rating	13A
[email protected] Reflow Temperature-Max (s)	30
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Element Configuration	Single
Power Dissipation	60W
Case Connection	COLLECTOR
Input Type	Standard
Transistor Application	POWER CONTROL
Rise Time	15ns
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	2.1V
Max Collector Current	13A
Reverse Recovery Time	37 ns
Collector Emitter Breakdown Voltage	600V
Collector Emitter Saturation Voltage	2.1V
Turn On Time	55 ns
Test Condition	480V, 6.5A, 50 Ω, 15V
Vce(on) (Max) @ Vge, Ic	2.1V @ 15V, 6.5A
Turn Off Time-Nom (toff)	320 ns
Gate Charge	27nC
Current - Collector Pulsed (Icm)	52A
Td (on/off) @ 25°C	39ns/93ns
Switching Energy	160μJ (on), 130μJ (off)
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	6V
Fall Time-Max (tf)	170ns
Height	4.699mm
Length	10.668mm
Width	9.65mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	RoHS Compliant
Lead Free	Lead Free