IRG4RC10SDTRPBF

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IRG4RC10SDTRPBF

Manufacturer part number:IRG4RC10SDTRPBF

Manufacturer:Infineon Technologies

Description:IRG4RC10SDTRPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

Case Package:SOT-23

Datasheet:IRG4RC10SDTRPBF Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	13 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins	3
Weight	350.003213mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2004
JESD-609 Code	e3
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
Termination	SMD/SMT
ECCN Code	EAR99
Terminal Finish	MATTE TIN OVER NICKEL
Additional Feature	LOW CONDUCTION LOSS
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	38W
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	30
Base Part Number	IRG4RC10SDPBF
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Element Configuration	Single
Power Dissipation	38W
Case Connection	COLLECTOR
Input Type	Standard
Transistor Application	POWER CONTROL
Rise Time	32ns
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	1.8V
Max Collector Current	14A
Reverse Recovery Time	28 ns
JEDEC-95 Code	TO-252AA
Collector Emitter Breakdown Voltage	600V
Collector Emitter Saturation Voltage	1.7V
Max Breakdown Voltage	600V
Turn On Time	106 ns
Test Condition	480V, 8A, 100 Ω, 15V
Vce(on) (Max) @ Vge, Ic	1.8V @ 15V, 8A
Turn Off Time-Nom (toff)	1780 ns
Gate Charge	15nC
Current - Collector Pulsed (Icm)	18A
Td (on/off) @ 25°C	76ns/815ns
Switching Energy	310μJ (on), 3.28mJ (off)
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	6V
Fall Time-Max (tf)	1080ns
Height	1.2446mm
Length	6.7056mm
Width	6.223mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	RoHS Compliant