Name	Value
Type	Parameter
Factory Lead Time	32 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3
Weight	38.000013g
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	1999
Series	POWER MOS 7®
JESD-609 Code	e1
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Tin/Silver/Copper (Sn/Ag/Cu)
Additional Feature	LOW CONDUCTION LOSS
Subcategory	Insulated Gate BIP Transistors
Voltage - Rated DC	1.2kV
Max Power Dissipation	417W
Current Rating	69A
Pin Count	3
JESD-30 Code	R-PSFM-T3
Number of Elements	1
Element Configuration	Single
Case Connection	COLLECTOR
Input Type	Standard
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	1.2kV
Max Collector Current	69A
Collector Emitter Breakdown Voltage	1.2kV
Voltage - Collector Emitter Breakdown (Max)	1200V
Collector Emitter Saturation Voltage	3.3V
Turn On Time	26 ns
Test Condition	600V, 25A, 5 Ω, 15V
Vce(on) (Max) @ Vge, Ic	3.9V @ 15V, 25A
Continuous Collector Current	69A
Turn Off Time-Nom (toff)	200 ns
IGBT Type	PT
Gate Charge	110nC
Current - Collector Pulsed (Icm)	90A
Td (on/off) @ 25°C	12ns/70ns
Switching Energy	500μJ (on), 440μJ (off)
Gate-Emitter Voltage-Max	30V
Gate-Emitter Thr Voltage-Max	6V
Height	5.31mm
Length	21.46mm
Width	16.26mm
Radiation Hardening	No
RoHS Status	RoHS Compliant
Lead Free	Lead Free

APT25GP120BDQ1G

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