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IRGP20B120UD-EP

  • IRGP20B120UD-EP
  • IRGP20B120UD-EP

IRGP20B120UD-EP

IRGP20B120UD-EP

Infineon Technologies

IRGP20B120UD-EP datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

SOT-23

IRGP20B120UD-EP Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 14 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Bulk
Published 1999
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Subcategory Insulated Gate BIP Transistors
Voltage - Rated DC 1.2kV
Max Power Dissipation 300W
Current Rating 40A
Number of Elements 1
Element Configuration Single
Power Dissipation 300W
Case Connection ISOLATED
Input Type Standard
Turn On Delay Time 50 ns
Transistor Application POWER CONTROL
Rise Time 20ns
Polarity/Channel Type N-CHANNEL
Turn-Off Delay Time 204 ns
Collector Emitter Voltage (VCEO) 4.85V
Max Collector Current 40A
Reverse Recovery Time 300 ns
JEDEC-95 Code TO-247AD
Collector Emitter Breakdown Voltage 1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Collector Emitter Saturation Voltage 3.05V
Turn On Time 70 ns
Test Condition 600V, 20A, 5 Ω, 15V
Vce(on) (Max) @ Vge, Ic 4.85V @ 15V, 40A
Turn Off Time-Nom (toff) 228 ns
IGBT Type NPT
Gate Charge 169nC
Current - Collector Pulsed (Icm) 120A
Switching Energy 850μJ (on), 425μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 6V
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status RoHS Compliant
Lead Free Lead Free
IRGP20B120UD-EP Product Details

IRGP20B120UD-EP Description


IRGP20B120UD-EP is a 1200v insulated gate bipolar transistor with an ultrafast soft recovery diode. The Infineon IRGP20B120UD-EP is optimized for Welding, UPS, and Induction Heating Applications. The Operating and Storage Temperature Range is between -55 and 150℃. And the transistor IRGP20B120UD-EP is in the TO-247AD package with 300W power dissipation.



IRGP20B120UD-EP Features


UltraFast Non-Punch Through (NPT) Technology

Low Diode VF (1.67V Typical @ 20A & 25°C)

10 μs Short Circuit Capability

Square RBSOA

UltraSoft Diode Recovery Characteristics

Positive VCE(on) Temperature Coefficient

Extended Lead TO-247AD Package

Lead-Free



IRGP20B120UD-EP Applications


Welding

UPS

Induction heating

Automotive 

Infotainment & cluster 

Industrial 

Electronic point of sale (EPOS) 

Personal electronics 

Gaming


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