IRG4BC30F datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website
SOT-23
IRG4BC30F Datasheet
non-compliant
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Specifications
Name
Value
Type
Parameter
Mounting Type
Through Hole
Package / Case
TO-220-3
Surface Mount
NO
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Published
2000
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Additional Feature
FAST SPEED
Terminal Position
SINGLE
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
JESD-30 Code
R-PSFM-T3
Qualification Status
Not Qualified
Number of Elements
1
Configuration
SINGLE
Case Connection
COLLECTOR
Input Type
Standard
Power - Max
100W
Transistor Application
POWER CONTROL
Polarity/Channel Type
N-CHANNEL
JEDEC-95 Code
TO-220AB
Voltage - Collector Emitter Breakdown (Max)
600V
Current - Collector (Ic) (Max)
31A
Turn On Time
36 ns
Test Condition
480V, 17A, 23 Ω, 15V
Vce(on) (Max) @ Vge, Ic
1.8V @ 15V, 17A
Turn Off Time-Nom (toff)
640 ns
Gate Charge
51nC
Current - Collector Pulsed (Icm)
120A
Td (on/off) @ 25°C
21ns/200ns
Switching Energy
230μJ (on), 1.18mJ (off)
RoHS Status
Non-RoHS Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
300
$1.75350
$526.05
IRG4BC30F Product Details
IRG4BC30F Description
The Infineon Technologies IRG4BC30F IGBT comes from Generation 4 IGBTs and is designed to be a "drop-in" replacement for equivalent industry-standard Generation 3 IGBTs.
IRG4BC30F Features
Fast: optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode).
Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3