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IRG4BC30W

IRG4BC30W

IRG4BC30W

Infineon Technologies

IRG4BC30W datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

SOT-23

IRG4BC30W Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Through Hole
Package / Case TO-220-3
Surface Mount NO
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2000
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Additional Feature LOW CONDUCTION LOSS
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSFM-T3
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE
Case Connection COLLECTOR
Input Type Standard
Power - Max 100W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
JEDEC-95 Code TO-220AB
Voltage - Collector Emitter Breakdown (Max) 600V
Current - Collector (Ic) (Max) 23A
Turn On Time 41 ns
Test Condition 480V, 12A, 23 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.7V @ 15V, 12A
Turn Off Time-Nom (toff) 300 ns
Gate Charge 51nC
Current - Collector Pulsed (Icm) 92A
Td (on/off) @ 25°C 25ns/99ns
Switching Energy 130μJ (on), 130μJ (off)
RoHS Status Non-RoHS Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
250 $1.97360 $493.4
IRG4BC30W Product Details

IRG4BC30W Description


The Infineon Technologies IRG4BC30W IGBT is designed expressly for Switch-Mode Power Supply and PFC (power factor correction) applications.



IRG4BC30W Features


  • Industry-benchmark switching losses improve the efficiency of all power supply topologies

  • 50% reduction of Eoff parameter 

  • Low IGBT conduction losses

  • Latest-generation IGBT design and construction offers tighter parameters distribution, exceptional reliability

  • Lead-Free



IRG4BC30W Applications


  • New energy vehicles, photovoltaic & wind power generation, smart grid


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