Name: IRG4BC30W
Brand: Infineon Technologies
SKU: IRG4BC30W
Availability: InStock

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IRG4BC30W

Manufacturer part number:IRG4BC30W

Manufacturer:Infineon Technologies

Description:IRG4BC30W datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

Case Package:SOT-23

Datasheet:IRG4BC30W Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Mounting Type	Through Hole
Package / Case	TO-220-3
Surface Mount	NO
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2000
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Additional Feature	LOW CONDUCTION LOSS
Terminal Position	SINGLE
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
JESD-30 Code	R-PSFM-T3
Qualification Status	Not Qualified
Number of Elements	1
Configuration	SINGLE
Case Connection	COLLECTOR
Input Type	Standard
Power - Max	100W
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
JEDEC-95 Code	TO-220AB
Voltage - Collector Emitter Breakdown (Max)	600V
Current - Collector (Ic) (Max)	23A
Turn On Time	41 ns
Test Condition	480V, 12A, 23 Ω, 15V
Vce(on) (Max) @ Vge, Ic	2.7V @ 15V, 12A
Turn Off Time-Nom (toff)	300 ns
Gate Charge	51nC
Current - Collector Pulsed (Icm)	92A
Td (on/off) @ 25°C	25ns/99ns
Switching Energy	130μJ (on), 130μJ (off)
RoHS Status	Non-RoHS Compliant

IRG4BC30W Product Details

The Infineon Technologies IRG4BC30W IGBT is designed expressly for Switch-Mode Power Supply and PFC (power factor correction) applications.

Industry-benchmark switching losses improve the efficiency of all power supply topologies
50% reduction of Eoff parameter
Low IGBT conduction losses
Latest-generation IGBT design and construction offers tighter parameters distribution, exceptional reliability
Lead-Free