IRGP20B120U-EP

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Manufacturer part number:IRGP20B120U-EP

Manufacturer:Infineon Technologies

Description:IRGP20B120U-EP datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

Case Package:SOT-23

Datasheet:IRGP20B120U-EP Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	14 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3
Number of Pins	3
Weight	38.000013g
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Bulk
Published	2004
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Subcategory	Insulated Gate BIP Transistors
Voltage - Rated DC	1.2kV
Max Power Dissipation	300W
Current Rating	40A
Number of Elements	1
Element Configuration	Single
Power Dissipation	300W
Input Type	Standard
Transistor Application	POWER CONTROL
Rise Time	30ns
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	4.85V
Max Collector Current	40A
JEDEC-95 Code	TO-247AD
Collector Emitter Breakdown Voltage	1.2kV
Voltage - Collector Emitter Breakdown (Max)	1200V
Collector Emitter Saturation Voltage	3.05V
Turn On Time	70 ns
Test Condition	600V, 20A, 5 Ω, 15V
Vce(on) (Max) @ Vge, Ic	4.85V @ 15V, 40A
Turn Off Time-Nom (toff)	228 ns
IGBT Type	NPT
Gate Charge	169nC
Current - Collector Pulsed (Icm)	120A
Switching Energy	850μJ (on), 425μJ (off)
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	6V
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	RoHS Compliant
Lead Free	Contains Lead, Lead Free