IXEH25N120

new-10%

Manufacturer part number:IXEH25N120

Manufacturer:IXYS

Description:IGBT 1200V 36A 200W TO247AD

Case Package:SOT-23

Datasheet:IXEH25N120 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-3P-3 Full Pack
Weight	6.500007g
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2005
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Max Power Dissipation	200W
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	3
JESD-30 Code	R-PSFM-T3
Qualification Status	Not Qualified
Number of Elements	1
Element Configuration	Single
Case Connection	COLLECTOR
Input Type	Standard
Power - Max	200W
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	3.2V
Max Collector Current	36A
Reverse Recovery Time	130 ns
JEDEC-95 Code	TO-247AD
Collector Emitter Breakdown Voltage	1.2kV
Voltage - Collector Emitter Breakdown (Max)	1200V
Collector Emitter Saturation Voltage	3.2V
Turn On Time	210 ns
Test Condition	600V, 20A, 68 Ω, 15V
Vce(on) (Max) @ Vge, Ic	3.2V @ 15V, 25A
Turn Off Time-Nom (toff)	750 ns
IGBT Type	NPT
Gate Charge	100nC
Switching Energy	4.1mJ (on), 1.5mJ (off)
RoHS Status	RoHS Compliant