IRG4BH20K-L

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Manufacturer part number:IRG4BH20K-L

Manufacturer:Infineon Technologies

Description:IRG4BH20K-L datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

Case Package:SOT-23

Datasheet:IRG4BH20K-L Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mounting Type	Through Hole
Package / Case	TO-262-3 Long Leads, I2Pak, TO-262AA
Surface Mount	NO
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2017
JESD-609 Code	e3
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn) - with Nickel (Ni) barrier
Additional Feature	ULTRA FAST, LOW CONDUCTION LOSS
Subcategory	Insulated Gate BIP Transistors
Terminal Position	SINGLE
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	30
JESD-30 Code	R-PSIP-T3
Qualification Status	Not Qualified
Number of Elements	1
Configuration	SINGLE
Case Connection	COLLECTOR
Input Type	Standard
Power - Max	60W
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Voltage - Collector Emitter Breakdown (Max)	1200V
Current - Collector (Ic) (Max)	11A
Power Dissipation-Max (Abs)	24W
Turn On Time	51 ns
Test Condition	960V, 5A, 50 Ω, 15V
Vce(on) (Max) @ Vge, Ic	4.3V @ 15V, 5A
Turn Off Time-Nom (toff)	720 ns
Gate Charge	28nC
Current - Collector Pulsed (Icm)	22A
Td (on/off) @ 25°C	23ns/93ns
Switching Energy	450μJ (on), 440μJ (off)
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	6V
Fall Time-Max (tf)	400ns
RoHS Status	Non-RoHS Compliant