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IRG4BC40UPBF

IRG4BC40UPBF

IRG4BC40UPBF

Infineon Technologies

IRG4BC40UPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

SOT-23

IRG4BC40UPBF Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 16 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2000
Part Status Last Time Buy
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Termination Through Hole
ECCN Code EAR99
Additional Feature ULTRA FAST SWITCHING
Subcategory Insulated Gate BIP Transistors
Voltage - Rated DC 600V
Max Power Dissipation 160W
Current Rating 40A
Number of Elements 1
Element Configuration Single
Power Dissipation 160W
Case Connection COLLECTOR
Input Type Standard
Turn On Delay Time 34 ns
Transistor Application POWER CONTROL
Rise Time 19ns
Polarity/Channel Type N-CHANNEL
Turn-Off Delay Time 110 ns
Collector Emitter Voltage (VCEO) 2.1V
Max Collector Current 40A
JEDEC-95 Code TO-220AB
Collector Emitter Breakdown Voltage 600V
Collector Emitter Saturation Voltage 2.1V
Turn On Time 49 ns
Test Condition 480V, 20A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 20A
Turn Off Time-Nom (toff) 380 ns
Gate Charge 100nC
Current - Collector Pulsed (Icm) 160A
Td (on/off) @ 25°C 34ns/110ns
Switching Energy 320μJ (on), 350μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 6V
Fall Time-Max (tf) 180ns
Height 16.51mm
Length 10.668mm
Width 4.826mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Contains Lead, Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $3.98000 $3.98
10 $3.57400 $35.74
100 $2.92810 $292.81
500 $2.49266 $1246.33
1,000 $2.10225 $2.10225
IRG4BC40UPBF Product Details
IRG4BC40UPBF Description


The IRG4BC40UPBF is an Insulated Gate Bipolar Transistor. It is designed for high operating frequencies in hard switching (8-40 kHz) and resonant mode (more than 200 kHz). As to the type of electronics, an insulated-gate bipolar transistor (IGBT) is a three-terminal power semiconductor device principally used as an electronic switch that evolved to combine high efficiency and fast switching as it was developed.


IRG4BC40UPBF Features


? UltraFast: designed for high-frequency operation Hard switching at 8-40 kHz, resonant mode at >200 kHz

? 4th Generation In comparison to Generation 3, the IGBT design has a narrower parameter distribution and improved efficiency.

? TO-220AB packaging (industry standard)

? Lead-Free

? IGBTs from Generation 4 have the best efficiency available

? IGBTs that are tuned for specific applications

? Designed to be a "drop-in" replacement for Generation 3 IR IGBTs that are industry standard


IRG4BC40UPBF Applications



? Consumer Electronics

? Industrial Technology

? The Energy Sector

? Aerospace Electronic Devices

? Transportation

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