IRG4BC40UPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website
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IRG4BC40UPBF Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
16 Weeks
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Published
2000
Part Status
Last Time Buy
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Termination
Through Hole
ECCN Code
EAR99
Additional Feature
ULTRA FAST SWITCHING
Subcategory
Insulated Gate BIP Transistors
Voltage - Rated DC
600V
Max Power Dissipation
160W
Current Rating
40A
Number of Elements
1
Element Configuration
Single
Power Dissipation
160W
Case Connection
COLLECTOR
Input Type
Standard
Turn On Delay Time
34 ns
Transistor Application
POWER CONTROL
Rise Time
19ns
Polarity/Channel Type
N-CHANNEL
Turn-Off Delay Time
110 ns
Collector Emitter Voltage (VCEO)
2.1V
Max Collector Current
40A
JEDEC-95 Code
TO-220AB
Collector Emitter Breakdown Voltage
600V
Collector Emitter Saturation Voltage
2.1V
Turn On Time
49 ns
Test Condition
480V, 20A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic
2.1V @ 15V, 20A
Turn Off Time-Nom (toff)
380 ns
Gate Charge
100nC
Current - Collector Pulsed (Icm)
160A
Td (on/off) @ 25°C
34ns/110ns
Switching Energy
320μJ (on), 350μJ (off)
Gate-Emitter Voltage-Max
20V
Gate-Emitter Thr Voltage-Max
6V
Fall Time-Max (tf)
180ns
Height
16.51mm
Length
10.668mm
Width
4.826mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Contains Lead, Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$3.98000
$3.98
10
$3.57400
$35.74
100
$2.92810
$292.81
500
$2.49266
$1246.33
1,000
$2.10225
$2.10225
IRG4BC40UPBF Product Details
IRG4BC40UPBF Description
The IRG4BC40UPBF is an Insulated Gate Bipolar Transistor. It is designed for high operating frequencies in hard switching (8-40 kHz) and resonant mode (more than 200 kHz). As to the type of electronics, an insulated-gate bipolar transistor (IGBT) is a three-terminal power semiconductor device principally used as an electronic switch that evolved to combine high efficiency and fast switching as it was developed.
IRG4BC40UPBF Features
? UltraFast: designed for high-frequency operation Hard switching at 8-40 kHz, resonant mode at >200 kHz
? 4th Generation In comparison to Generation 3, the IGBT design has a narrower parameter distribution and improved efficiency.
? TO-220AB packaging (industry standard)
? Lead-Free
? IGBTs from Generation 4 have the best efficiency available
? IGBTs that are tuned for specific applications
? Designed to be a "drop-in" replacement for Generation 3 IR IGBTs that are industry standard