IXGT4N250C

new-10%

Manufacturer part number:IXGT4N250C

Manufacturer:IXYS

Description:IGBT 2500V 13A 150W TO268

Case Package:SOT-23

Datasheet:IXGT4N250C Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	18 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2011
JESD-609 Code	e3
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
Terminal Finish	Matte Tin (Sn)
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	150W
Terminal Position	SINGLE
Terminal Form	GULL WING
Reach Compliance Code	unknown
Pin Count	4
JESD-30 Code	R-PSSO-G2
Qualification Status	Not Qualified
Number of Elements	1
Configuration	SINGLE
Case Connection	COLLECTOR
Input Type	Standard
Power - Max	150W
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	6V
Max Collector Current	13A
Collector Emitter Breakdown Voltage	2.5kV
Voltage - Collector Emitter Breakdown (Max)	2500V
Test Condition	1250V, 4A, 20 Ω, 15V
Vce(on) (Max) @ Vge, Ic	6V @ 15V, 4A
Turn Off Time-Nom (toff)	471 ns
IGBT Type	NPT
Gate Charge	57nC
Current - Collector Pulsed (Icm)	46A
Td (on/off) @ 25°C	-/350ns
Switching Energy	360μJ (off)
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	5V
RoHS Status	ROHS3 Compliant