IRGB20B60PD1PBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website
SOT-23
IRGB20B60PD1PBF Datasheet
non-compliant
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
16 Weeks
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3
Number of Pins
3
Supplier Device Package
TO-220AB
Weight
6.000006g
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Published
2003
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Termination
Through Hole
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Voltage - Rated DC
600V
Max Power Dissipation
215W
Current Rating
40A
Element Configuration
Single
Power Dissipation
215W
Input Type
Standard
Turn On Delay Time
20 ns
Power - Max
215W
Rise Time
5ns
Turn-Off Delay Time
115 ns
Collector Emitter Voltage (VCEO)
2.8V
Max Collector Current
40A
Reverse Recovery Time
28 ns
Collector Emitter Breakdown Voltage
600V
Voltage - Collector Emitter Breakdown (Max)
600V
Current - Collector (Ic) (Max)
40A
Collector Emitter Saturation Voltage
2.05V
Test Condition
390V, 13A, 10Ohm, 15V
Vce(on) (Max) @ Vge, Ic
2.8V @ 15V, 20A
IGBT Type
NPT
Gate Charge
68nC
Current - Collector Pulsed (Icm)
80A
Td (on/off) @ 25°C
20ns/115ns
Switching Energy
95μJ (on), 100μJ (off)
Height
8.763mm
Length
10.5156mm
Width
4.69mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
RoHS Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1,000
$1.72666
$1.72666
IRGB20B60PD1PBF Product Details
IRGB20B60PD1PBF Description
IRGB20B60PD1PBF IGBT is built on a brand new idea of planar technology to create an IGBT that has a more precise variation of the energy of switching (Eoff) against temperature. IGBT IRGB20B60PD1PBF is the subset of IGBTs that are suited to operate at a high frequency that exceeds 100 kHz. IRGB20B60PD1PBF Infineon Technologies is suitable for Telecom and Server SMPS, PFC and ZVS SMPS Circuits, Power Supplies, Consumer Electronics Power Supplies.