SIGC12T60NCX1SA5 Description

The SIGC12T60NCX1SA5 is an IGBT Chip in NPT-technology. BJT and MOSFET are combined to create the IGBT, also known as Insulated Gate Bipolar Transistor. Additionally, the name suggests that they have fused together. Input MOSFETs typically have very high input impedances, which is referred to as an "insulated gate." It relies on the voltage at its gate terminal rather than requiring any input current to function. The term "bipolar" designates a BJT output component that is bipolar in character, meaning that both different types of charge carriers contribute to the current flow. It enables it to operate with extremely high current and voltage levels while just requiring little voltage. The IGBT is a voltage-controlled component thanks to this hybrid configuration.

SIGC12T60NCX1SA5 Features

• Positive temperature coefficient

• Easy paralleling

• 600V NPT technology

• 100μm chip

• Low ON-state resistance

SIGC12T60NCX1SA5 Applications

• Drives

• Switched Mode Power Supply

• Uninterruptible Power Supply

• AC and DC motor drives

• Solar inverters