IRG4BC40WPBF

new-10%

Manufacturer part number:IRG4BC40WPBF

Manufacturer:Infineon Technologies

Description:IGBT 600V 40A 160W TO220AB

Case Package:SOT-23

Datasheet:IRG4BC40WPBF Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	16 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2000
Part Status	Last Time Buy
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Termination	Through Hole
ECCN Code	EAR99
Additional Feature	LOW CONDUCTION LOSS
Subcategory	Insulated Gate BIP Transistors
Voltage - Rated DC	600V
Max Power Dissipation	160W
Current Rating	40A
Number of Elements	1
Element Configuration	Single
Power Dissipation	160W
Case Connection	COLLECTOR
Input Type	Standard
Turn On Delay Time	27 ns
Transistor Application	POWER CONTROL
Rise Time	22ns
Polarity/Channel Type	N-CHANNEL
Turn-Off Delay Time	100 ns
Collector Emitter Voltage (VCEO)	2.5V
Max Collector Current	40A
JEDEC-95 Code	TO-220AB
Collector Emitter Breakdown Voltage	600V
Collector Emitter Saturation Voltage	2.5V
Input Capacitance	1.9nF
Turn On Time	49 ns
Test Condition	480V, 20A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic	2.5V @ 15V, 20A
Turn Off Time-Nom (toff)	174 ns
Gate Charge	98nC
Current - Collector Pulsed (Icm)	160A
Td (on/off) @ 25°C	27ns/100ns
Switching Energy	110μJ (on), 230μJ (off)
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	6V
Fall Time-Max (tf)	110ns
Height	8.77mm
Length	10.54mm
Width	4.69mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Contains Lead, Lead Free