IRG4CC30UB Description

IRG4CC30UB is a 600v IGBT Die in wafer form. An insulated-gate bipolar transistor (IGBT) is a three-terminal power semiconductor device primarily used as an electronic switch, which, as it was developed, came to combine high efficiency and fast switching. It consists of four alternating layers (P–N–P–N) that are controlled by a metal–oxide–semiconductor (MOS) gate structure. 

IRG4CC30UB Features

Collector-to- Emitter Saturation Voltage: 2.2V

Colletor-to-Emitter Breakdown Voltage: 600V

Gate Threshold Voltage: 3.0~6.0V

Zero Gate Voltage Collector Current: 250μA

Gate-to-Emitter Leakage Current: ±1.1μA

IRG4CC30UB Applications

Automotive 

Infotainment & cluster 

Communications equipment 

Wireless infrastructure 

Personal electronics 

Connected peripherals & printers