IRG4CC80UD  Features

UltraFast: optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode

Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3

IGBT co-packaged with HEXFRED9 ultrafast, ultra-soft-recovery ani-parallel diodes for use in bridge configurations

Industry-standard TO-220AB package

Lead-Free

IRG4CC80UD Benefits

Generation -4 IGBTs offer the highest efficiencies available

IGBTs optimized for specific application conditions

HEXFRED diodes optimized for performance with IGBTs. Minimized recovery characteristics require less/mo snubbing

Designed to be a "drop-in" replacement for equivalent industry-standard Generation3 IR IGBTs