SIGC15T60EX7SA1 Description

This IGBT device was created using an innovative trench gate and field stop structure that is state-of-the-art. It is a brand-new "HB" series IGBT, which stands for any frequency converter's best trade-off between conduction and switching losses. Additionally, safer paralleling operation is produced by a modest positive VCE(sat) temperature coefficient and a very constrained parameter distribution.

SIGC08T60EX7SA1 Features

LDO (Linear) and DDR applications are very common.

uses an interface IC for bus terminators

SIGC08T60EX7SA1 Applications

Switching applications