SKB06N60ATMA1 datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website
SOT-23
SKB06N60ATMA1 Datasheet
non-compliant
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Specifications
Name
Value
Type
Parameter
Mounting Type
Surface Mount
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Surface Mount
YES
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2008
Pbfree Code
no
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
ECCN Code
EAR99
Additional Feature
LOW CONDUCTION LOSS
Terminal Position
SINGLE
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Reach Compliance Code
compliant
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Base Part Number
*KB06N60
Pin Count
3
JESD-30 Code
R-PSSO-G2
Qualification Status
Not Qualified
Number of Elements
1
Configuration
SINGLE WITH BUILT-IN DIODE
Case Connection
COLLECTOR
Input Type
Standard
Power - Max
68W
Transistor Application
POWER CONTROL
Polarity/Channel Type
N-CHANNEL
Reverse Recovery Time
200ns
Voltage - Collector Emitter Breakdown (Max)
600V
Current - Collector (Ic) (Max)
12A
Turn On Time
41 ns
Test Condition
400V, 6A, 50 Ω, 15V
Vce(on) (Max) @ Vge, Ic
2.4V @ 15V, 6A
Turn Off Time-Nom (toff)
318 ns
IGBT Type
NPT
Gate Charge
32nC
Current - Collector Pulsed (Icm)
24A
Td (on/off) @ 25°C
25ns/220ns
Switching Energy
215μJ
RoHS Status
RoHS Compliant
SKB06N60ATMA1 Product Details
SKB06N60ATMA1 Description
SKB06N60ATMA1 transistor is a MOS field-effect RF power transistor designed to be used in signal applications. The special low thermal resistance packaging makes SKB06N60ATMA1 MOSFET suitable for ISM applications in which reliability and durability are essential. It has the common source configuration.