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IXGT60N60B2

IXGT60N60B2

IXGT60N60B2

IXYS

Trans IGBT Chip N-CH 600V 75A 3-Pin(2+Tab) TO-268

SOT-23

IXGT60N60B2 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Weight 4.500005g
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2003
Series HiPerFAST™
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
Terminal Finish Matte Tin (Sn)
Max Power Dissipation 500W
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number IXG*60N60
Pin Count 4
JESD-30 Code R-PSSO-G2
Qualification Status Not Qualified
Number of Elements 1
Element Configuration Single
Case Connection COLLECTOR
Input Type Standard
Turn On Delay Time 28 ns
Power - Max 500W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Turn-Off Delay Time 160 ns
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 75A
Collector Emitter Breakdown Voltage 600V
Collector Emitter Saturation Voltage 1.8V
Turn On Time 64 ns
Test Condition 400V, 50A, 3.3 Ω, 15V
Vce(on) (Max) @ Vge, Ic 1.8V @ 15V, 50A
Turn Off Time-Nom (toff) 550 ns
IGBT Type PT
Gate Charge 170nC
Current - Collector Pulsed (Icm) 300A
Td (on/off) @ 25°C 28ns/160ns
Switching Energy 1mJ (off)
RoHS Status RoHS Compliant
Lead Free Lead Free

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