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IRG4PC20UPBF

IRG4PC20UPBF

IRG4PC20UPBF

Infineon Technologies

IRG4PC20UPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

SOT-23

IRG4PC20UPBF Datasheet

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Specifications
Name Value
Type Parameter
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Supplier Device Package TO-247AC
Operating Temperature -55°C~150°C TJ
Packaging Bulk
Published 2007
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Voltage - Rated DC 250V
Max Power Dissipation 60W
Current Rating 98A
Element Configuration Single
Power Dissipation 60W
Input Type Standard
Power - Max 60W
Rise Time 44ns
Collector Emitter Voltage (VCEO) 2.1V
Max Collector Current 13A
Collector Emitter Breakdown Voltage 600V
Voltage - Collector Emitter Breakdown (Max) 600V
Current - Collector (Ic) (Max) 13A
Collector Emitter Saturation Voltage 2.1V
Test Condition 480V, 6.5A, 50Ohm, 15V
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 6.5A
Gate Charge 27nC
Current - Collector Pulsed (Icm) 52A
Td (on/off) @ 25°C 21ns/86ns
Switching Energy 100μJ (on), 120μJ (off)
RoHS Status RoHS Compliant
Lead Free Lead Free
IRG4PC20UPBF Product Details

IRG4PC20UPBF Description


IRG4PC20UPBF is a type of insulated gate bipolar transistor with an ultrafast soft recovery diode, which is optimized for high operating frequencies 8-40 kHz in hard switching, and>200 kHz in resonant mode. As a Generation 4 IGBT,  it is able to offer the highest power density motor controls possible, tighter parameter distribution, and higher efficiency compared with Generation 3. The IRG4PC20UPBF IGBT is used as a "drop-in" replacement for Generation 3 IR IGBTs.



IRG4PC20UPBF Features


Industry-standard TO-2247AC packages

Extremely tight Vce(on) distribution

Tighter parameter distribution

Highest efficiencies available

Higher efficiency



IRG4PC20UPBF Applications


Industrial motor drive

Solar inverters

Welding 


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