IRG4PC20UPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website
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IRG4PC20UPBF Datasheet
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Specifications
Name
Value
Type
Parameter
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-247-3
Number of Pins
3
Supplier Device Package
TO-247AC
Operating Temperature
-55°C~150°C TJ
Packaging
Bulk
Published
2007
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Voltage - Rated DC
250V
Max Power Dissipation
60W
Current Rating
98A
Element Configuration
Single
Power Dissipation
60W
Input Type
Standard
Power - Max
60W
Rise Time
44ns
Collector Emitter Voltage (VCEO)
2.1V
Max Collector Current
13A
Collector Emitter Breakdown Voltage
600V
Voltage - Collector Emitter Breakdown (Max)
600V
Current - Collector (Ic) (Max)
13A
Collector Emitter Saturation Voltage
2.1V
Test Condition
480V, 6.5A, 50Ohm, 15V
Vce(on) (Max) @ Vge, Ic
2.1V @ 15V, 6.5A
Gate Charge
27nC
Current - Collector Pulsed (Icm)
52A
Td (on/off) @ 25°C
21ns/86ns
Switching Energy
100μJ (on), 120μJ (off)
RoHS Status
RoHS Compliant
Lead Free
Lead Free
IRG4PC20UPBF Product Details
IRG4PC20UPBF Description
IRG4PC20UPBF is a type of insulated gate bipolar transistor with an ultrafast soft recovery diode, which is optimized for high operating frequencies 8-40 kHz in hard switching, and>200 kHz in resonant mode. As a Generation 4 IGBT, it is able to offer the highest power density motor controls possible, tighter parameter distribution, and higher efficiency compared with Generation 3. The IRG4PC20UPBF IGBT is used as a "drop-in" replacement for Generation 3 IR IGBTs.