FGPF30N30DTU datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available on our website
SOT-23
FGPF30N30DTU Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack
Number of Pins
3
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Termination
Through Hole
Max Power Dissipation
46W
Base Part Number
FGPF30N30
Element Configuration
Single
Power Dissipation
46W
Input Type
Standard
Collector Emitter Voltage (VCEO)
300V
Max Collector Current
30A
Reverse Recovery Time
21 ns
Collector Emitter Breakdown Voltage
300V
Vce(on) (Max) @ Vge, Ic
1.5V @ 15V, 10A
Gate Charge
39nC
Current - Collector Pulsed (Icm)
80A
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
RoHS Compliant
FGPF30N30DTU Product Details
FGPF30N30DTU Description
FGPF30N30DTU transistor is a MOS field-effect RF power transistor designed to be used in signal applications. The special low thermal resistance packaging makes FGPF30N30DTU MOSFET suitable for ISM applications in which reliability and durability are essential. It has the common source configuration.