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FGPF30N30DTU

FGPF30N30DTU

FGPF30N30DTU

ON Semiconductor

FGPF30N30DTU datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available on our website

SOT-23

FGPF30N30DTU Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Number of Pins 3
Operating Temperature -55°C~150°C TJ
Packaging Tube
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Termination Through Hole
Max Power Dissipation 46W
Base Part Number FGPF30N30
Element Configuration Single
Power Dissipation 46W
Input Type Standard
Collector Emitter Voltage (VCEO) 300V
Max Collector Current 30A
Reverse Recovery Time 21 ns
Collector Emitter Breakdown Voltage 300V
Vce(on) (Max) @ Vge, Ic 1.5V @ 15V, 10A
Gate Charge 39nC
Current - Collector Pulsed (Icm) 80A
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status RoHS Compliant
FGPF30N30DTU Product Details

FGPF30N30DTU Description

 

FGPF30N30DTU transistor is a MOS field-effect RF power transistor designed to be used in signal applications. The special low thermal resistance packaging makes FGPF30N30DTU MOSFET suitable for ISM applications in which reliability and durability are essential. It has the common source configuration.

 

 

FGPF30N30DTU Features

 

Gold metalization

Excellent thermal stability

Common source configuration

Thermally enhanced packaging

 

 

FGPF30N30DTU Applications

 

ISM applications

DC large signal applications

Power factor correction

Electronic lamp ballasts

Flat panel display


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