FGD3N60LSDTM-T                               Description

ON Semiconductor's Insulated Gate Bipolar Transistors (IGBTs) provide very low conduction losses. The device is designed for applica-tions where very low On-Voltage Drop is a required feature.

FGD3N60LSDTM-T                              Features

? High Current Capability

? Very Low Saturation Voltage : VCE(sat) = 1.2 V @ IC = 3A

? High Input Impedance

FGD3N60LSDTM-T                              Applications

? HID Lamp Applications

? Piezo Fuel Injection Applications