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IRG4PC50FDPBF

IRG4PC50FDPBF

IRG4PC50FDPBF

Infineon Technologies

IRG4PC50FDPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

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IRG4PC50FDPBF Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 14 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tray
Published 2001
Part Status Last Time Buy
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Termination Through Hole
ECCN Code EAR99
Additional Feature ULTRA FAST SOFT RECOVERY
Subcategory Insulated Gate BIP Transistors
Voltage - Rated DC 600V
Max Power Dissipation 200W
Current Rating 70A
Number of Elements 1
Element Configuration Single
Power Dissipation 200W
Case Connection COLLECTOR
Input Type Standard
Turn On Delay Time 55 ns
Transistor Application POWER CONTROL
Rise Time 25ns
Polarity/Channel Type N-CHANNEL
Turn-Off Delay Time 240 ns
Collector Emitter Voltage (VCEO) 1.6V
Max Collector Current 70A
Reverse Recovery Time 50 ns
JEDEC-95 Code TO-247AC
Collector Emitter Breakdown Voltage 600V
Collector Emitter Saturation Voltage 1.6V
Turn On Time 86 ns
Test Condition 480V, 39A, 5 Ω, 15V
Vce(on) (Max) @ Vge, Ic 1.6V @ 15V, 39A
Turn Off Time-Nom (toff) 660 ns
Gate Charge 190nC
Current - Collector Pulsed (Icm) 280A
Td (on/off) @ 25°C 55ns/240ns
Switching Energy 1.5mJ (on), 2.4mJ (off)
Fall Time-Max (tf) 210ns
Height 20.7mm
Length 15.87mm
Width 5.3086mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $8.79000 $8.79
25 $7.57440 $189.36
100 $6.57680 $657.68
500 $5.72700 $2863.5
1,000 $4.98804 $4.98804
IRG4PC50FDPBF Product Details

IRG4PC50FDPBF Description

The Infineon IRG4PC50FDPBF is an insulated gate Bipolar Transistor with ultrafast soft recovery diode, optimized for medium operating frequencies. Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3. IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations.

IRG4PC50FDPBF Features

Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3
Industry standard TO-247AC package
Lead-Free
IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations
Fast: Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode).

IRG4PC50FDPBF Applications

Motor Drive & Control

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