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SGP10N60RUFDTU

  • SGP10N60RUFDTU
  • SGP10N60RUFDTU

SGP10N60RUFDTU

SGP10N60RUFDTU

ON Semiconductor

SGP10N60RUFDTU datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available on our website

SOT-23

SGP10N60RUFDTU Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 13 Weeks
Lifecycle Status ACTIVE (Last Updated: 1 week ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Weight 1.8g
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2013
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Additional Feature LOW CONDUCTION LOSS, HIGH SPEED SWITCHING
HTS Code 8541.29.00.95
Subcategory Insulated Gate BIP Transistors
Voltage - Rated DC 600V
Max Power Dissipation 208W
Current Rating 10A
Base Part Number SG*10N60
JESD-30 Code R-PSFM-T3
Number of Elements 1
Element Configuration Single
Power Dissipation 75W
Input Type Standard
Transistor Application MOTOR CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 16A
Reverse Recovery Time 42 ns
JEDEC-95 Code TO-220AB
Collector Emitter Breakdown Voltage 600V
Collector Emitter Saturation Voltage 2.2V
Max Breakdown Voltage 600V
Turn On Time 49 ns
Test Condition 300V, 10A, 20 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.8V @ 15V, 10A
Turn Off Time-Nom (toff) 284 ns
Gate Charge 30nC
Current - Collector Pulsed (Icm) 30A
Td (on/off) @ 25°C 15ns/36ns
Switching Energy 141μJ (on), 215μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 8V
Fall Time-Max (tf) 220ns
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.893471 $0.893471
10 $0.842897 $8.42897
100 $0.795186 $79.5186
500 $0.750175 $375.0875
1000 $0.707712 $707.712
SGP10N60RUFDTU Product Details

SGP10N60RUFDTU Description


SGP10N60RUFDTU is a single IGBT with a Collector-Emitter Breakdown Voltage of 600V from Infineon Technologies. SGP10N60RUFDTU operates between -55°C~150°C TJ, and its Max Collector Current is 16A. The SGP10N60RUFDTU has 3 pins and it is available in a Tube packaging way. SGP10N60RUFDTU has a 1200V Voltage - Collector Emitter Breakdown (Max) value.



SGP10N60RUFDTU Features


  • Additional Feature: LOW CONDUCTION LOSS, HIGH SPEED SWITCHING

  • Test Condition: 300V, 10A, 20 Ω, 15V

  • Switching Energy: 141μJ (on), 215μJ (off)

  • Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 10A

  • Polarity/Channel Type: N-CHANNEL



SGP10N60RUFDTU Applications


  • Power Management

  • Consumer Electronics

  • Portable Devices

  • Industrial


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