IRGS4620DTRLPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website
SOT-23
IRGS4620DTRLPBF Datasheet
non-compliant
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Specifications
Name
Value
Type
Parameter
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins
3
Supplier Device Package
D2PAK
Weight
260.39037mg
Operating Temperature
-40°C~175°C TJ
Packaging
Tape & Reel (TR)
Published
2015
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Max Operating Temperature
175°C
Min Operating Temperature
-40°C
Max Power Dissipation
140W
Element Configuration
Single
Input Type
Standard
Power - Max
140W
Collector Emitter Voltage (VCEO)
1.85V
Max Collector Current
20A
Reverse Recovery Time
68 ns
Collector Emitter Breakdown Voltage
600V
Voltage - Collector Emitter Breakdown (Max)
600V
Current - Collector (Ic) (Max)
32A
Collector Emitter Saturation Voltage
1.97V
Test Condition
400V, 12A, 22Ohm, 15V
Vce(on) (Max) @ Vge, Ic
1.85V @ 15V, 12A
Gate Charge
25nC
Current - Collector Pulsed (Icm)
36A
Td (on/off) @ 25°C
31ns/83ns
Switching Energy
75μJ (on), 225μJ (off)
RoHS Status
RoHS Compliant
IRGS4620DTRLPBF Product Details
IRGS4620DTRLPBF Description
IRGS4620DTRLPBF is a type of insulated gate bipolar transistor with an ultrafast soft recovery diode, which is manufactured by Infineon Technologies to provide high efficiency in a wide range of applications. Due to its square RBSOA and maximum junction temperature rated at 175°C, improved reliability can be ensured due to rugged hard switching performance and higher power capability. Moreover, excellent current sharing can be delivered in parallel operation due to its positive VCE(ON) temperature coefficient.