IXGK28N140B3H1

new-10%

Manufacturer part number:IXGK28N140B3H1

Manufacturer:IXYS

Description:IGBT 1400V 60A 300W TO264

Case Package:SOT-23

Datasheet:IXGK28N140B3H1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	8 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-264-3, TO-264AA
Weight	10.000011g
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2010
Series	GenX3™
JESD-609 Code	e1
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Terminal Finish	Tin/Silver/Copper (Sn/Ag/Cu)
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	300W
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	3
JESD-30 Code	R-PSFM-T3
Qualification Status	Not Qualified
Number of Elements	1
Element Configuration	Single
Power Dissipation	300W
Case Connection	COLLECTOR
Input Type	Standard
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	1.4kV
Max Collector Current	60A
Reverse Recovery Time	350 ns
Collector Emitter Breakdown Voltage	1.4kV
Voltage - Collector Emitter Breakdown (Max)	1400V
Collector Emitter Saturation Voltage	3V
Turn On Time	66 ns
Test Condition	960V, 28A, 5 Ω, 15V
Vce(on) (Max) @ Vge, Ic	3.6V @ 15V, 28A
Turn Off Time-Nom (toff)	915 ns
IGBT Type	PT
Gate Charge	88nC
Current - Collector Pulsed (Icm)	150A
Td (on/off) @ 25°C	16ns/190ns
Switching Energy	3.6mJ (on), 3.9mJ (off)
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	5V
RoHS Status	RoHS Compliant