Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2011
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	300W
Terminal Position	SINGLE
Pin Count	3
JESD-30 Code	R-PSFM-T3
Qualification Status	Not Qualified
Number of Elements	1
Configuration	SINGLE
Case Connection	COLLECTOR
Input Type	Standard
Power - Max	300W
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	2.3V
Max Collector Current	90A
JEDEC-95 Code	TO-247AD
Collector Emitter Breakdown Voltage	600V
Turn On Time	75 ns
Test Condition	400V, 36A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic	2.3V @ 15V, 36A
Turn Off Time-Nom (toff)	306 ns
IGBT Type	PT
Gate Charge	113nC
Current - Collector Pulsed (Icm)	220A
Td (on/off) @ 25°C	40ns/270ns
Switching Energy	950μJ (on), 840μJ (off)
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	6.5V
RoHS Status	RoHS Compliant

IXGH50N60C4

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