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IRGP4062-EPBF

IRGP4062-EPBF

IRGP4062-EPBF

Infineon Technologies

IRGP4062-EPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

SOT-23

IRGP4062-EPBF Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 14 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Weight 38.000013g
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2012
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Max Power Dissipation 250W
Element Configuration Single
Input Type Standard
Power - Max 250W
Collector Emitter Voltage (VCEO) 1.95V
Max Collector Current 48A
Collector Emitter Breakdown Voltage 600V
Collector Emitter Saturation Voltage 2.04V
Test Condition 400V, 24A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic 1.95V @ 15V, 24A
IGBT Type Trench
Gate Charge 75nC
Current - Collector Pulsed (Icm) 72A
Td (on/off) @ 25°C 41ns/104ns
Switching Energy 115μJ (on), 600μJ (off)
Height 20.7mm
Length 15.87mm
Width 5.13mm
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free
IRGP4062-EPBF Product Details

IRGP4062-EPBF Description


IRGP4062-EPBF is a single IGBT from the manufacturer Infineon Technologies with the break down voltage of 600V. The operating temperature of IRGP4062-EPBF is -55°C~175°C TJ and its maximum power dissipation is 250W. IRGP4062-EPBF has 3 pins and it is available in Tube (TR) packaging way. The Collector Emitter Saturation Voltage of IRGP4062-EPBF is 2.04V.



IRGP4062-EPBF Features


  • Low VCE (ON) Trench IGBT Technology

  • Low switching losses

  • Maximum Junction temperature 175 °C

  • 5 μS short circuit SOA

  • Square RBSOA

  • 100% of the parts tested for ILM

  • Positive VCE (ON) Temperature co-efficient

  • Tight parameter distribution

  • Lead Free Package



IRGP4062-EPBF Applications


  • High Efficiency in a wide range of applications

  • Suitable for a wide range of switching frequencies due to Low VCE (ON) and Low Switching losses

  • Rugged transient Performance for increased reliability

  • Excellent Current sharing in parallel operation

  • Low EMI


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