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IRG7PH46U-EP

IRG7PH46U-EP

IRG7PH46U-EP

Infineon Technologies

IRG7PH46U-EP datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

SOT-23

IRG7PH46U-EP Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2011
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 469W
Qualification Status Not Qualified
Number of Elements 1
Rise Time-Max 55ns
Element Configuration Single
Case Connection COLLECTOR
Input Type Standard
Power - Max 469W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 2V
Max Collector Current 130A
JEDEC-95 Code TO-247AD
Collector Emitter Breakdown Voltage 1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Collector Emitter Saturation Voltage 1.7V
Turn On Time 80 ns
Test Condition 600V, 40A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2V @ 15V, 40A
Turn Off Time-Nom (toff) 700 ns
IGBT Type Trench
Gate Charge 220nC
Current - Collector Pulsed (Icm) 160A
Td (on/off) @ 25°C 45ns/410ns
Switching Energy 2.56mJ (on), 1.78mJ (off)
Gate-Emitter Thr Voltage-Max 6V
Fall Time-Max (tf) 65ns
REACH SVHC No SVHC
RoHS Status RoHS Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $6.313057 $6.313057
10 $5.955714 $59.55714
100 $5.618598 $561.8598
500 $5.300564 $2650.282
1000 $5.000532 $5000.532
IRG7PH46U-EP Product Details

IRG7PH46U-EP               Description

 

The IGBT combines, in a single device, a control input with a MOS structure and a bipolar power transistor that acts as an output switch. IGBTs are suitable for high-voltage, high-current applications. They are designed to drive high-power applications with a low-power input.

 


IRG7PH46U-EP               Features


? Low VCE (ON) trench IGBT technology

? Low switching losses

? Maximum junction temperature 175 °C

? Square RBSOA

? 100% of the parts tested for ILM

? Positive VCE (ON) temperature co-efficient

? Tight parameter distribution

? Lead -Free

 

IRG7PH46U-EP               Applications

? U.P.S

? Welding

? Solar inverter

? Induction heating

 



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