IRG7PH46U-EP datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website
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IRG7PH46U-EP Datasheet
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Specifications
Name
Value
Type
Parameter
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-247-3
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~175°C TJ
Packaging
Tube
Published
2011
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Subcategory
Insulated Gate BIP Transistors
Max Power Dissipation
469W
Qualification Status
Not Qualified
Number of Elements
1
Rise Time-Max
55ns
Element Configuration
Single
Case Connection
COLLECTOR
Input Type
Standard
Power - Max
469W
Transistor Application
POWER CONTROL
Polarity/Channel Type
N-CHANNEL
Collector Emitter Voltage (VCEO)
2V
Max Collector Current
130A
JEDEC-95 Code
TO-247AD
Collector Emitter Breakdown Voltage
1.2kV
Voltage - Collector Emitter Breakdown (Max)
1200V
Collector Emitter Saturation Voltage
1.7V
Turn On Time
80 ns
Test Condition
600V, 40A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic
2V @ 15V, 40A
Turn Off Time-Nom (toff)
700 ns
IGBT Type
Trench
Gate Charge
220nC
Current - Collector Pulsed (Icm)
160A
Td (on/off) @ 25°C
45ns/410ns
Switching Energy
2.56mJ (on), 1.78mJ (off)
Gate-Emitter Thr Voltage-Max
6V
Fall Time-Max (tf)
65ns
REACH SVHC
No SVHC
RoHS Status
RoHS Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$6.313057
$6.313057
10
$5.955714
$59.55714
100
$5.618598
$561.8598
500
$5.300564
$2650.282
1000
$5.000532
$5000.532
IRG7PH46U-EP Product Details
IRG7PH46U-EP Description
The IGBT combines, in a single device, a control input with a MOS structure and a bipolar power transistor that acts as an output switch. IGBTs are suitable for high-voltage, high-current applications. They are designed to drive high-power applications with a low-power input.