IRG4BC20UDPBF

new-10%

Manufacturer part number:IRG4BC20UDPBF

Manufacturer:Infineon Technologies

Description:IGBT 600V 13A 60W TO220AB

Case Package:SOT-23

Datasheet:IRG4BC20UDPBF Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	16 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2003
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Termination	Through Hole
ECCN Code	EAR99
Subcategory	Insulated Gate BIP Transistors
Voltage - Rated DC	600V
Max Power Dissipation	60W
Current Rating	13A
Number of Elements	1
Element Configuration	Single
Power Dissipation	60W
Case Connection	COLLECTOR
Input Type	Standard
Turn On Delay Time	39 ns
Transistor Application	POWER CONTROL
Rise Time	15ns
Polarity/Channel Type	N-CHANNEL
Turn-Off Delay Time	93 ns
Collector Emitter Voltage (VCEO)	2.1V
Max Collector Current	13A
Reverse Recovery Time	37 ns
JEDEC-95 Code	TO-220AB
Collector Emitter Breakdown Voltage	600V
Collector Emitter Saturation Voltage	2.1V
Turn On Time	55 ns
Test Condition	480V, 6.5A, 50 Ω, 15V
Vce(on) (Max) @ Vge, Ic	2.1V @ 15V, 6.5A
Turn Off Time-Nom (toff)	320 ns
Gate Charge	27nC
Current - Collector Pulsed (Icm)	52A
Td (on/off) @ 25°C	39ns/93ns
Switching Energy	160μJ (on), 130μJ (off)
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	6V
Fall Time-Max (tf)	170ns
Height	16.51mm
Length	10.668mm
Width	4.826mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	RoHS Compliant
Lead Free	Lead Free