IXSX35N120BD1

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Manufacturer part number:IXSX35N120BD1

Manufacturer:IXYS

Description:IGBT 1200V 70A 300W PLUS247

Case Package:SOT-23

Datasheet:IXSX35N120BD1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3
Number of Pins	3
Weight	7.300002g
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2000
JESD-609 Code	e1
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Terminal Finish	Tin/Silver/Copper (Sn/Ag/Cu)
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	300W
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Base Part Number	IXS*35N120
Pin Count	3
Qualification Status	Not Qualified
Number of Elements	1
Element Configuration	Single
Case Connection	COLLECTOR
Input Type	Standard
Power - Max	300W
Transistor Application	MOTOR CONTROL
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	1.2kV
Max Collector Current	70A
Reverse Recovery Time	40 ns
Collector Emitter Breakdown Voltage	1.2kV
Voltage - Collector Emitter Breakdown (Max)	1200V
Collector Emitter Saturation Voltage	3.6V
Turn On Time	67 ns
Test Condition	960V, 35A, 5 Ω, 15V
Vce(on) (Max) @ Vge, Ic	3.6V @ 15V, 35A
Turn Off Time-Nom (toff)	580 ns
IGBT Type	PT
Gate Charge	120nC
Current - Collector Pulsed (Icm)	140A
Td (on/off) @ 25°C	36ns/160ns
Switching Energy	5mJ (off)
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	6V
RoHS Status	RoHS Compliant
Lead Free	Lead Free