STGW20NB60KD

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Manufacturer part number:STGW20NB60KD

Manufacturer:STMicroelectronics

Description:STGW20NB60KD datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available on our website

Case Package:SOT-23

Datasheet:STGW20NB60KD Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Series	PowerMESH™
JESD-609 Code	e3
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn)
Subcategory	Insulated Gate BIP Transistors
Voltage - Rated DC	600V
Max Power Dissipation	170W
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	not_compliant
Current Rating	20A
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Base Part Number	STGW20
Pin Count	3
JESD-30 Code	R-PSFM-T3
Qualification Status	Not Qualified
Number of Elements	1
Element Configuration	Single
Power Dissipation	170W
Input Type	Standard
Transistor Application	MOTOR CONTROL
Rise Time	25ns
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	2.8V
Max Collector Current	50A
Reverse Recovery Time	80.5 ns
JEDEC-95 Code	TO-247AC
Collector Emitter Breakdown Voltage	600V
Collector Emitter Saturation Voltage	2.8V
Turn On Time	76 ns
Test Condition	480V, 20A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic	2.8V @ 15V, 20A
Turn Off Time-Nom (toff)	280 ns
Gate Charge	85nC
Current - Collector Pulsed (Icm)	100A
Td (on/off) @ 25°C	39ns/105ns
Switching Energy	675μJ (on), 500μJ (off)
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	7V
RoHS Status	ROHS3 Compliant