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IRG4RC10SDTRLP

IRG4RC10SDTRLP

IRG4RC10SDTRLP

Infineon Technologies

IRG4RC10SDTRLP datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

SOT-23

IRG4RC10SDTRLP Datasheet

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Specifications
Name Value
Type Parameter
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2007
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Base Part Number IRG4RC10SDPBF
Input Type Standard
Power - Max 38W
Reverse Recovery Time 28ns
Voltage - Collector Emitter Breakdown (Max) 600V
Current - Collector (Ic) (Max) 14A
Test Condition 480V, 8A, 100 Ω, 15V
Vce(on) (Max) @ Vge, Ic 1.8V @ 15V, 8A
Gate Charge 15nC
Current - Collector Pulsed (Icm) 18A
Td (on/off) @ 25°C 76ns/815ns
Switching Energy 310μJ (on), 3.28mJ (off)
IRG4RC10SDTRLP Product Details

IRG4RC10SDTRLP Description


IRG4RC10SDTRLP is a type of insulated gate bipolar transistor with an ultrafast soft recovery diode, which is designed to minimize power dissipation at up to 3 KHz PWM frequency in inverter drives, and up to 4 kHz in brushless DC drives. As a Generation 4 IGBT,  it is able to offer tighter parameter distribution and higher efficiency compared with Generation 3. The IRG4RC10SDTRLP IGBT is supplied in the D-Pak/TO-252AA package for the purpose of saving board space.



IRG4RC10SDTRLP Features


Industry-standard D-Pak/TO-252AA packages

Extremely tight Vce(on) distribution

Tighter parameter distribution

Highest efficiencies available

Ultrafast soft recovery diode



IRG4RC10SDTRLP Applications


Industrial motor drive

Solar inverters

Welding 


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