IRG4RC10SDTRLP datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website
SOT-23
IRG4RC10SDTRLP Datasheet
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Specifications
Name
Value
Type
Parameter
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2007
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Base Part Number
IRG4RC10SDPBF
Input Type
Standard
Power - Max
38W
Reverse Recovery Time
28ns
Voltage - Collector Emitter Breakdown (Max)
600V
Current - Collector (Ic) (Max)
14A
Test Condition
480V, 8A, 100 Ω, 15V
Vce(on) (Max) @ Vge, Ic
1.8V @ 15V, 8A
Gate Charge
15nC
Current - Collector Pulsed (Icm)
18A
Td (on/off) @ 25°C
76ns/815ns
Switching Energy
310μJ (on), 3.28mJ (off)
IRG4RC10SDTRLP Product Details
IRG4RC10SDTRLP Description
IRG4RC10SDTRLP is a type of insulated gate bipolar transistor with an ultrafast soft recovery diode, which is designed to minimize power dissipation at up to 3 KHz PWM frequency in inverter drives, and up to 4 kHz in brushless DC drives. As a Generation 4 IGBT, it is able to offer tighter parameter distribution and higher efficiency compared with Generation 3. The IRG4RC10SDTRLP IGBT is supplied in the D-Pak/TO-252AA package for the purpose of saving board space.