IXGH30N60A

new-10%

Manufacturer part number:IXGH30N60A

Manufacturer:IXYS

Description:IXGH Series 600 Vce 50 A 100 ns t(on) High Speed IGBT - TO-247AD

Case Package:SOT-23

Datasheet:IXGH30N60A Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3
Transistor Element Material	SILICON
Packaging	Tube
Published	1997
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Additional Feature	HIGH SPEED
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	200W
Base Part Number	IXG*30N60
JESD-30 Code	R-PSFM-T3
Qualification Status	Not Qualified
Operating Temperature (Max)	150°C
Number of Elements	1
Rise Time-Max	200ns
Element Configuration	Single
Power Dissipation	200W
Case Connection	COLLECTOR
Input Type	Standard
Turn On Delay Time	100 ns
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Turn-Off Delay Time	500 ns
Collector Emitter Voltage (VCEO)	3V
Max Collector Current	50A
Continuous Drain Current (ID)	60A
JEDEC-95 Code	TO-247AD
Collector Emitter Breakdown Voltage	600V
Drain to Source Breakdown Voltage	600V
Turn On Time	300 ns
Vce(on) (Max) @ Vge, Ic	3V @ 15V, 30A
Drain to Source Resistance	2.6Ohm
Turn Off Time-Nom (toff)	850 ns
Gate-Emitter Voltage-Max	30V
VCEsat-Max	3 V
Gate-Emitter Thr Voltage-Max	5V
RoHS Status	RoHS Compliant
Lead Free	Lead Free