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IRGI4062DPBF

IRGI4062DPBF

IRGI4062DPBF

Infineon Technologies

IRGI4062DPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

SOT-23

IRGI4062DPBF Datasheet

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Specifications
Name Value
Type Parameter
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Supplier Device Package TO-220AB Full-Pak
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2008
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Input Type Standard
Power - Max 48W
Reverse Recovery Time 56ns
Voltage - Collector Emitter Breakdown (Max) 600V
Current - Collector (Ic) (Max) 22A
Test Condition 400V, 12A, 10Ohm, 15V
Vce(on) (Max) @ Vge, Ic 1.58V @ 15V, 12A
IGBT Type Trench
Gate Charge 48nC
Current - Collector Pulsed (Icm) 44A
Td (on/off) @ 25°C 41ns/100ns
Switching Energy 31μJ (on), 183μJ (off)
IRGI4062DPBF Product Details

IRGI4062DPBF Features

Low VCE (ON) Trench IGBT Technology

Low switching losses

5 μS short circuit SOA

Square RBSOA

100% of the parts tested for ILM

Positive VCE (ON) Temperature coefficient

Ultra-fast soft Recovery Co-Pak Diode

Tight parameter distribution

Lead-Free Package



IRGI4062DPBF Applications

High Efficiency in a wide range of applications

Suitable for a wide range of switching frequencies due to

Low VCE (ON) and Low Switching losses

Rugged transient Performance for increased reliability

Excellent Current sharing in parallel operation

Low EMI



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