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SIGC76T65R3EX1SA1

SIGC76T65R3EX1SA1

SIGC76T65R3EX1SA1

Infineon Technologies

SIGC76T65R3EX1SA1 datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

SOT-23

SIGC76T65R3EX1SA1 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Surface Mount
Package / Case Die
Operating Temperature -40°C~175°C TJ
Published 2016
Series TrenchStop™
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory Insulated Gate BIP Transistors
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Input Type Standard
Halogen Free Halogen Free
Drain to Source Voltage (Vdss) 650V
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 650V
Max Dual Supply Voltage 650V
Current - Collector (Ic) (Max) 150A
Vce(on) (Max) @ Vge, Ic 1.2V @ 15V, 45A
IGBT Type Trench Field Stop
Current - Collector Pulsed (Icm) 450A
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 6.4V
RoHS Status ROHS3 Compliant
Lead Free Lead Free
SIGC76T65R3EX1SA1 Product Details

SIGC76T65R3EX1SA1 Features

650V trench & field stop technology

Low VCEsat

Low turn-off losses

Short tail current

Positive temperature coefficient

Easy paralleling



SIGC76T65R3EX1SA1 Applications

Drives


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