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IRG5U75HF12A

IRG5U75HF12A

IRG5U75HF12A

Infineon Technologies

IRG5U75HF12A datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available on our website

SOT-23

IRG5U75HF12A Datasheet

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Specifications
Name Value
Type Parameter
Mount Chassis Mount
Mounting Type Chassis Mount
Package / Case POWIR® 34 Module
Operating Temperature -40°C~150°C TJ
Published 2014
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Power Dissipation 540W
Configuration Half Bridge
Power - Max 540W
Input Standard
Collector Emitter Voltage (VCEO) 3.5V
Max Collector Current 130A
Current - Collector Cutoff (Max) 1mA
Collector Emitter Breakdown Voltage 1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Input Capacitance 9.5nF
Vce(on) (Max) @ Vge, Ic 3.5V @ 15V, 75A
NTC Thermistor No
Input Capacitance (Cies) @ Vce 9.5nF @ 25V
RoHS Status RoHS Compliant
IRG5U75HF12A Product Details

IRG5U75HF12A Description


IRG5U75HF12A is a 1200v IGBT Haif-bridge. The transistor IRG5U75HF12A can be applied in industrial motor drives, uninterruptible power supply, welding, cutting machines switched mode power supply, induction heating, and AC inverter drive applications due to the following features. The Operating and Storage Temperature Range is between -40 and 125℃. And the transistor IRG5U75HF12A is in the POWIR 34? package with 540W Power dissipation.



IRG5U75HF12A Features


Low VCE(ON) and Switching Losses

100% RBSOA Tested

10μsec Short Circuit Safe Operating Area

POWIR 34? Package

Lead-Free 



IRG5U75HF12A Applications


Industrial Motor Drive

Uninterruptible Power Supply

Welding and Cutting Machine

Switched Mode Power Supply

Induction Heating

AC Inverter Drive


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