STGWA80H65DFB Description

The STGWA80H65DFB is an IGBT developed using an advanced proprietary trench gate field stop structure. The transistor STGWA80H65DFB is part of the new HB series of IGBTs, which represents an optimum compromise between conduction and switching loss to maximize the efficiency of any frequency converter. Furthermore, the slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling

operation.

STGWA80H65DFB Features

Maximum junction temperature: TJ = 175 °C

High-speed switching series

Minimized tail current

Low saturation voltage: VCE(sat) = 1.6 V (typ.) @ IC = 80 A

Tight parameter distribution

Safe paralleling

Positive VCE(sat) temperature coefficient

Low thermal resistance

Very fast soft recovery antiparallel diode

STGWA80H65DFB Applications

Photovoltaic inverters

High-frequency converters

Automotive 

Hybrid, electric & powertrain systems 

Enterprise systems 

Datacenter & enterprise computing 

Personal electronics 

Home theater & entertainment