IRG7PH37K10D-EPBF

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Manufacturer part number:IRG7PH37K10D-EPBF

Manufacturer:Infineon Technologies

Description:IRG7PH37K10D-EPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

Case Package:SOT-23

Datasheet:IRG7PH37K10D-EPBF Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3
Number of Pins	3
Operating Temperature	-40°C~150°C TJ
Packaging	Tube
Published	2013
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
ECCN Code	EAR99
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	216W
Rise Time-Max	45ns
Element Configuration	Single
Input Type	Standard
Power - Max	216W
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	2.4V
Max Collector Current	45A
Reverse Recovery Time	120 ns
Collector Emitter Breakdown Voltage	1.2kV
Voltage - Collector Emitter Breakdown (Max)	1200V
Test Condition	600V, 15A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic	2.4V @ 15V, 15A
Gate Charge	135nC
Current - Collector Pulsed (Icm)	60A
Td (on/off) @ 25°C	50ns/240ns
Switching Energy	1mJ (on), 600μJ (off)
Gate-Emitter Thr Voltage-Max	7.5V
Fall Time-Max (tf)	100ns
Radiation Hardening	No
RoHS Status	RoHS Compliant

IRG7PH37K10D-EPBF Description

IRG7PH37K10D-EPBF transistor is a MOS field-effect RF power transistor designed to be used in signal applications. The special low thermal resistance packaging makes IRG7PH37K10D-EPBF MOSFET suitable for ISM applications in which reliability and durability are essential. Infineon Technologies IRG7PH37K10D-EPBF has the common source configuration.

IRG7PH37K10D-EPBF Features

Gold metalization

Excellent thermal stability

Common source configuration

Thermally enhanced packaging

IRG7PH37K10D-EPBF Applications

ISM applications

DC large signal applications

Power factor correction