IRG6I330UPBF                 Description

This IGBT is specifically designed for applications in Plasma Display Panels. This device utilizes advanced trench IGBT technology to achieve low VCE(on) and low EPULSETM rating per silicon area which improve panel efficiency. Additional features are 150°C operating junction temperature and high repetitive peak current capability. These features combine to make this IGBT a highly efficient, robust and reliable device for PDP applications.

IRG6I330UPBF             Features   

 Advanced Trench IGBT Technology

 Optimized for Sustain and Energy Recovery

circuits in PDP applications

 Low VCE(on) and Energy per Pulse (EPULSETM)

for improved panel efficiency

 High repetitive peak current capability

 Lead Free package

IRG6I330UPBF                Applications

?Drives

?Industrial Power Supplies

-Industrial SMPS

-Industrial UPS