IRG7CH73K10EF-R Description

IRG7CH73K10EF-R is a type of insulated gate bipolar transistor that is designed based on low VCE (ON) trench IGBT technology. Due to low VCE (ON) and low switching losses, it is ideally suitable for a wide range of switching frequencies. Increased reliability can be ensured based on rugged switching performance and higher power capability. Moreover, the IRG7CH73K10EF-R IGBT is able to deliver excellent current sharing in parallel operation and tight parameter distribution.

IRG7CH73K10EF-R Features

Tight parameter distribution

Low VCE (ON) trench IGBT technology

Low switching losses

Square RBSOA

Positive VCE (ON) temperature coefficient

IRG7CH73K10EF-R Applications

Medium power drives

UPS

HEV inverter

Welding

Induction heating