IRG7PSH50UDPBF

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Manufacturer part number:IRG7PSH50UDPBF

Manufacturer:Infineon Technologies

Description:IRG7PSH50UDPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

Case Package:SOT-23

Datasheet:IRG7PSH50UDPBF Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3
Number of Pins	247
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2010
JESD-609 Code	e3
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	MATTE TIN OVER NICKEL
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	462W
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	40
JESD-30 Code	R-PSFM-T3
Number of Elements	1
Rise Time-Max	60ns
Element Configuration	Single
Case Connection	COLLECTOR
Input Type	Standard
Power - Max	462W
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	2V
Max Collector Current	116A
Reverse Recovery Time	190 ns
Collector Emitter Breakdown Voltage	1.2kV
Voltage - Collector Emitter Breakdown (Max)	1200V
Turn On Time	70 ns
Test Condition	600V, 50A, 5 Ω, 15V
Vce(on) (Max) @ Vge, Ic	2V @ 15V, 50A
Turn Off Time-Nom (toff)	650 ns
IGBT Type	Trench
Gate Charge	440nC
Current - Collector Pulsed (Icm)	150A
Td (on/off) @ 25°C	35ns/430ns
Switching Energy	3.6mJ (on), 2.2mJ (off)
Gate-Emitter Voltage-Max	30V
Gate-Emitter Thr Voltage-Max	6V
Fall Time-Max (tf)	65ns
Radiation Hardening	No
RoHS Status	RoHS Compliant
Lead Free	Lead Free