SGH23N60UFDTU datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available on our website
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SGH23N60UFDTU Datasheet
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Specifications
Name
Value
Type
Parameter
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-3P-3, SC-65-3
Number of Pins
3
Weight
6.401g
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Voltage - Rated DC
600V
Max Power Dissipation
100W
Current Rating
12A
Base Part Number
SG*23N60
Element Configuration
Single
Power Dissipation
100W
Input Type
Standard
Collector Emitter Voltage (VCEO)
600V
Max Collector Current
23A
Reverse Recovery Time
60ns
Collector Emitter Breakdown Voltage
600V
Collector Emitter Saturation Voltage
2.1V
Test Condition
300V, 12A, 23 Ω, 15V
Vce(on) (Max) @ Vge, Ic
2.6V @ 15V, 12A
Gate Charge
49nC
Current - Collector Pulsed (Icm)
92A
Td (on/off) @ 25°C
17ns/60ns
Switching Energy
115μJ (on), 135μJ (off)
RoHS Status
RoHS Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$2.788989
$2.788989
10
$2.631122
$26.31122
100
$2.482191
$248.2191
500
$2.341689
$1170.8445
1000
$2.209141
$2209.141
SGH23N60UFDTU Product Details
SGH23N60UFDTU Description
SGH23N60UFDTU is a 600V Ultra-Fast IGBT. Fairchild's Insulated Gate Bipolar Transistor(IGBT) UFD. SGH23N60UFDTU provides low conduction and switching losses. UFD series is designed for the applications such as motor control and general inverters where High-Speed Switching is required. The Operating and Storage Temperature Range is between -55 and 150℃. And the transistor SGH23N60UFDTU is in the TO-3P package with 100W power dissipation.
SGH23N60UFDTU Features
High-Speed Switching
Low Saturation Voltage : VCE(sat) = 2.1 V @ IC = 12A