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IRGBF20F

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  • IRGBF20F

IRGBF20F

IRGBF20F

Infineon Technologies

IRGBF20F datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

SOT-23

IRGBF20F Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Through Hole
Package / Case TO-220-3
Supplier Device Package TO-220AB
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 1996
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Input Type Standard
Power - Max 60W
Voltage - Collector Emitter Breakdown (Max) 900V
Current - Collector (Ic) (Max) 9A
Vce(on) (Max) @ Vge, Ic 4.3V @ 15V, 5.3A
RoHS Status Non-RoHS Compliant
IRGBF20F Product Details

IRGBF20F Description


Compared to comparable bipolar transistors, International Rectifier's Insulated Gate Bipolar Transistors (IGBTs) offer higher useable current densities, but their gate-drive requirements are also less complex than those of the well-known power MOSFET. They offer a variety of high-voltage, high-current applications significant advantages.



IRGBF20F Features


  • All "tail" losses are included in switching-loss rating.

  • Medium operating frequency (1 to 10 kHz) optimization For a current versus. frequency graph, see Fig. 1.



IRGBF20F Applications


Switching applications


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