IRGR4045DPBF Description

IRGR4045DPBF is a 600v insulated gate bipolar transistor with an ultrafast soft recovery diode. The Infineon IRGR4045DPBF provides high efficiency in a wide range of applications, and excellent current sharing in parallel operation. The transistor IRGR4045DPBF is suitable for a wide range of Switching Frequencies due to Low VCE (ON) and Low Switching Losses. The Operating and Storage Temperature Range is between -55 and 175℃. And the transistor IRGR4045DPBF is in the D-Pak package with 77W power dissipation.

IRGR4045DPBF Features

Low VcE (on) Trench IGBT Technology

Low Switching Losses

Maximum Junction temperature 175 °C

5μs SCSOA

Square RBSOA

100% of the parts tested for ILM①

Positive VcE (on) Temperature Coefficient.

Ultra Fast Soft Recovery Co-pak Diode

Tighter Distribution of Parameters

Lead-Free, RoHS Compliant

IRGR4045DPBF Applications

Communications equipment 

Wireless infrastructure 

Industrial 

Test & Measurement 

Personal electronics 

PC & notebooks