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IRG7U75HF12A

IRG7U75HF12A

IRG7U75HF12A

Infineon Technologies

IRG7U75HF12A datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available on our website

SOT-23

IRG7U75HF12A Datasheet

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In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Chassis Mount
Mounting Type Chassis Mount
Package / Case POWIR® 34 Module
Operating Temperature -40°C~150°C TJ
Published 2014
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Power Dissipation 450W
Configuration Half Bridge
Power - Max 450W
Input Standard
Collector Emitter Voltage (VCEO) 2V
Max Collector Current 150A
Current - Collector Cutoff (Max) 1mA
Collector Emitter Breakdown Voltage 1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Input Capacitance 7nF
Vce(on) (Max) @ Vge, Ic 2V @ 15V, 75A
NTC Thermistor No
Input Capacitance (Cies) @ Vce 7nF @ 25V
RoHS Status RoHS Compliant
IRG7U75HF12A Product Details

IRG7U75HF12A              Description

 

IGBT (Insulated Gate Bipolar Transistor) module is a device required for inverter use in many types of industrial equipment, and had driven the trend towards high currents and high voltage since 1990.

 


IRG7U75HF12A              Applications

· Industrial Motor Drive

· Uninterruptible Power Supply

· Welding and Cutting Machine

· Switched Mode Power Supply

· Induction Heating

· AC Inverter Drive

 


IRG7U75HF12A              Application

? AC & DC Motor Controls

? General Purpose Inverters

? Robotics

? Servo Controls

? UPS

 

 


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