IRG7U75HF12A datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available on our website
SOT-23
IRG7U75HF12A Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mount
Chassis Mount
Mounting Type
Chassis Mount
Package / Case
POWIR® 34 Module
Operating Temperature
-40°C~150°C TJ
Published
2014
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Max Power Dissipation
450W
Configuration
Half Bridge
Power - Max
450W
Input
Standard
Collector Emitter Voltage (VCEO)
2V
Max Collector Current
150A
Current - Collector Cutoff (Max)
1mA
Collector Emitter Breakdown Voltage
1.2kV
Voltage - Collector Emitter Breakdown (Max)
1200V
Input Capacitance
7nF
Vce(on) (Max) @ Vge, Ic
2V @ 15V, 75A
NTC Thermistor
No
Input Capacitance (Cies) @ Vce
7nF @ 25V
RoHS Status
RoHS Compliant
IRG7U75HF12A Product Details
IRG7U75HF12A Description
IGBT (Insulated Gate Bipolar Transistor) module is a device required for inverter use in many types of industrial equipment, and had driven the trend towards high currents and high voltage since 1990.